1SV311 Datasheet - Toshiba Semiconductor

1SV311 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.1 (typ.) Low series resistance: rs = 0.28 Ω (typ.) Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the application of high tempera.

1SV311 Datasheet (112.73 KB)