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1SV311 Diode

1SV311 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio * High capacitance ratio: C1 V/C4 V = 2.1 (typ.) *.

1SV311 Applications

* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a

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Diode Toshiba Semiconductor
Toshiba Semiconductor 1SV311-like datasheet