1SV314 Datasheet - Toshiba Semiconductor

1SV314 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) z Low Series Resistance : rs = 0.35 Ω (Typ.) z Useful for Small Size Tuner Unit: mm Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Junction Temperature Storage Temperature Range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/cu.

1SV314 Datasheet (125.59 KB)