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1SV314 Diode

1SV314 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) z Low Serie.

1SV314 Applications

* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a

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Diode Toshiba Semiconductor
Toshiba Semiconductor 1SV314-like datasheet