.
IEC60127-2 - MINIATURE FUSES - 5x20mm
MINIA TURE FUSES INIATURE IEC 60127-2/VI, 250 V , T V, lead free This product is not recommended formerly No. 196/S 5x20mm / No. 199 Specifications .IXFH60N65X2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast.NNR470M100V12.5x25F - Non-Polar Aluminum Electrolytic Capacitors
Non-Polar Aluminum Electrolytic Capacitors RADIAL LEADS NON-POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • DESIGNED FOR APPLICATIONS WITH REVER.IXTP4N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A.IXFH60N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET IXFH60N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) 650V 60A 52m .IXFP34N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 Symbol VDSS VDG.5X2503 - MicroClock Programmable Clock Generator
MicroClock Programmable Clock Generator 5X2503 Datasheet Description The 5X2503 MicroClock is a programmable clock generator and is intended for low.IXFA12N65X2 - Power MOSFET
X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA.25X20ALNIG - 2.5V SERIAL FLASH MEMORY
W25X10AL, W25X20AL, W25X40AL, W25X80AL 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Re.25X20VPIG - SERIAL FLASH MEMORY
W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J.25X20BVNIG - Serial Flash Memory
W25X10BV/20BV/40BV 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI Publication Release Date: August 20,, 2009 - 1- .AOK065V65X2 - Power MOSFET
Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS =15V) for broad driver comp.AOK060V65X2 - 650V Silicon Carbide Power MOSFET
AOK060V65X2 650V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS,(ON) • Fast switching with .AOM015V75X2Q - 750V Silicon Carbide Power MOSFET
AOM015V75X2Q 750 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with.NNR102M16V12.5x25F - Non-Polar Aluminum Electrolytic Capacitors
Non-Polar Aluminum Electrolytic Capacitors RADIAL LEADS NON-POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • DESIGNED FOR APPLICATIONS WITH REVER.NEXA474Z11V44.5x28.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.IXTK102N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on) 650V 102A 30m N-Channel Enhancement Mo.IXTP8N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A.IXTY8N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A.IXTH24N65X2 - Power MOSFET
X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/d.