2.5x2.0 Datasheet | Specifications & PDF Download

W25X10BL/20BL/40BL 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI Publication Release Date: October 14, 2009 -

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AOK060V65X2 650V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS,(ON) • Fast switching with

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AOM015V75X2Q 750 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with

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W25X10BV/20BV/40BV 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI Publication Release Date: August 20,, 2009 - 1-

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W25X10A, W25X20A, W25X40A, W25X80A 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Dat

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W25X10AL, W25X20AL, W25X40AL, W25X80AL 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Re

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W25X10A, W25X20A, W25X40A, W25X80A 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Dat

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W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J

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Non-Polar Aluminum Electrolytic Capacitors RADIAL LEADS NON-POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • DESIGNED FOR APPLICATIONS WITH REVER

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W25X10BL/20BL/40BL 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI Publication Release Date: October 14, 2009 -

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X2-Class HiPerFETTM Power MOSFET IXFH46N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) 650V 46A 69m

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W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J

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MINIA TURE FUSES INIATURE IEC 60127-2/VI, 250 V , T V, lead free This product is not recommended formerly No. 196/S 5x20mm / No. 199 Specifications

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast

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W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J

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CAMEL TECHNOLOGY PLASTIC FILM CAPACITORS M E TA L L I Z E D P O LY P R O P Y L E N E F I L M PA C I T O R „ Outline Drawing Loose W max T max W H H m

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W25X20CL 2.5 / 3 / 3.3 V 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI Publication Release Date: August 06, 2015 - 1 - Revision F W25X

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Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS =15V) for broad driver comp

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY2N65X2 IXTP2N65X2 VDSS = ID25 = RDS(on) 650V 2A 2.3 Symb

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X2-Class HiPerFETTM Power MOSFET IXFH80N65X2 IXFK80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intr

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