2048-BIT Datasheet | Specifications & PDF Download

® LY62L20488 Rev. 0.3 2048K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised the

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EXEL Microelectronics, Inc. UINE N XL24C02 GE 2,048-Bit Serial Electrically Erasable PROM 2.7 To 5.5 Volt Operation FEATURES • Low Power CMOS — Ac

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• INTEGRATEDCIRCUIT iii » TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT Tl'lP8155P TMP8156p N-CHANNEL SILICON GATE MOS 2048 BIT STATIC MOS

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EXEL Microelectronics, Inc. S (XL93LC56) • 2.7 to 5.5V Operation a 4.5 to 5.5V Operation (XL93LC56A) t a • Extended .D Temperature Range: -40°C to +8

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Am8155/ Am8156 2048-Bit Static MOS RAM With I/O Ports and Timer ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • 256 word x 8-bits • Single +5V pow

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INTEGRATED CIRCUITS DATA SHEET PCF85116-3 2048 × 8-bit CMOS EEPROM with I2C-bus interface Product specification Supersedes data of 1997 Feb 24 File u

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LP62S2048-T Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe

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LP62S2048-T Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe

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LP62S2048-T Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architectur

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FINAL Am27X2048 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: — Factory optimized prog

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