20N60A Datasheet | Specifications & PDF Download

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag

(30 views)

Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100%

(19 views)

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini

(16 views)

HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high

(14 views)

Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

(14 views)

Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description： CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

(14 views)

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

(14 views)

Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Tec

(12 views)

SJTA20N60A Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.17Ω ID 20A Feat

(12 views)

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switch

(9 views)

HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated h

(9 views)

HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated h

(9 views)

Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100%

(9 views)

Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100%

(9 views)

HM20N60A General Description： VDSS 600 HM20N60A, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technol

(9 views)

GenX3TM 600V IGBT Ultra-Low Vsat PT IGBTs for up to 5kHz Switching IXGK320N60A3 IXGX320N60A3 VCES = IC110 = VCE(sat)  600V 210A 1.30V Symbol VCES

(8 views)

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini

(8 views)

Silicon N-Channel Power MOSFET ○R CS20N60 A8R General Description： CS20N60 A8R the silicon N-channel Enhanced VDMOSFET, is obtained by the self-a

(8 views)

Data Sheet HGTG20N60A4D February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high volta

(7 views)

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switch

(7 views)