Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N6.
JieJie
20N60A - N-channel MOSFET
Description JMP N-channel MOSFET Features 600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
Fairchild Semiconductor
HGT4E20N60A4DS - 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high .
Fairchild Semiconductor
HGTG20N60A4 - N-Channel IGBT
HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switch.
Intersil Corporation
HGTG20N60A4 - N-Channel IGBT
HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated h.
JIEJIE
JMPF20N60A - N-channel MOSFET
Description JMP N-channel MOSFET Features 600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
Huajing Microelectronics
CS20N60A8H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
Huajing Microelectronics
CS20N60ANH - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description： CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
JIEJIE
JMPS20N60A - N-channel MOSFET
Description JMP N-channel MOSFET Features 600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
TRinno
TMAN20N60A - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification BVDSS 600V TMAN20N60A N-channe.
Microsemi Corporation
MSAFX20N60A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX20N60A 600 Volts 20 Amps 350 mΩ N-CHANNEL ENHANCEMENT MODE POWER.
Fairchild Semiconductor
20N60A4D - HGTG20N60A4D
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltag.
TGW
CS20N60AND - Silicon N-Channel Power MOSFET
Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Tec.
IXYS
IXGN320N60A3 - 600V IGBT
GenX3TM 600V IGBT IXGN320N60A3 Ultra-Low-Vsat PT IGBT for up to 5kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ T.
IXYS
IXGN120N60A3 - IGBT
GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol VCES VCGR VGES VGEM IC25 IC110 I F110 I CM SS.
IXYS
IXGN120N60A3D1 - IGBT
GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol VCES VCGR VGES VGEM IC25 IC110 I F110 I CM SS.
IXYS
IXGK120N60A3 - Ultra-Low Vsat PT IGBT
GenX3TM A3-Class IGBTS Ultra-Low Vsat PT IGBTs for up to 5kHz Switching IXGK120N60A3* IXGX120N60A3 *Obsolete Part Number Symbol VCES VCGR VGES VGEM .
IXYS
IXSM20N60A - High Speed IGBT
Not for new designs Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Sho.
IXYS
IXSH20N60A - High Speed IGBT
Not for new designs Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Sho.
ON Semiconductor
20N60A4D - N-Channel IGBT
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini.
IXYS
20N60A - IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.