20NS Datasheet | Specifications & PDF Download

BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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Silan Microelectronics SVG10120NSA_Datasheet 16A, 100V N-CHANNEL MOSFET DESCRIPTION SVG10120NSA is an N-channel enhancement mode power MOS field ef

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BSC500N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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SM3320NSQA/SM3320NSQG ® N-Channel Enhancement Mode MOSFET Features • 30V/49A, RDS(ON) = 7.8mΩ(max.) @ VGS =10V RDS(ON) = 12.3mΩ(max.) @ VGS =4.5V •

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Naina Semiconductor Ltd. 320NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No

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RFUS20NS4S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 www.DataSheet4U.com Super Fast Recovery Diodes RFUS20NS4S [

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Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread

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Type BSZ12DN20NS3 G $(*'#$%TM3 Power-Transistor Features 9 /2* ,* 7 &% ' .0% $ % $ $ .- 4&0 1 * .9 $ ) - - &+  - .0 , ++ &4&+ 9 6 $ &+ + &-

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Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

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Naina Semiconductor Ltd. 320NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No

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Naina Semiconductor Ltd. 320NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No

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Isc N-Channel MOSFET Transistor IRL520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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BSC500N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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SM6020NSF Features · 63V/80A, RDS(ON)= 4.5mW (Max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Chan

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19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc

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Data Sheet Schottky Barrier Diode RBQ20NS65A lApplications General rectification 　　　lDimensions (Unit : mm) 　lLand size figure (Unit : mm) lFeatures

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VBTA1220NS N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (

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Data Sheet January 1999 A371-Type Analog Uncooled Isolated DFB FastLight ™ Laser Module s s s No thermoelectric cooler required Single- and double-i

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Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zApplications General rectification zDimensions(Unit : mm) RFN20 NS3S zFeatures

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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