.
International Rectifier
IRF520NS - Power MOSFET
PD -91340A IRF520NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175°.
International Rectifier
IRF520NSPBF - HEXFET Power MOSFET
PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.DataSheet4U.com www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.co.
INCHANGE
IRF520NS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
ROHM
RFN20NS3S - Super Fast Recovery Diode
Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zApplications General rectification zDimensions(Unit : mm) RFN20 NS3S zFeatures.
International Rectifier
IRL520NS - Power MOSFET
www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole.
Infineon
BSC500N20NS3G - MOSFET
BSC500N20NS3G MOSFET OptiMOSTM3Power-Transistor,200V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Veryl.
Infineon
BSC350N20NSFD - Power-Transistor
BSC350N20NSFD MOSFET OptiMOSTM3Power-Transistor,200V Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(.
Maxim Integrated Products
MAX5055 - 4A 20ns Dual MOSFET Drivers
19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc.
MCE
PI-820NS - SURFACE MOUNT-CERAMIC PIN DIODE
SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE 0.8–4 GHz GENERAL INFORMATION The PI-800 Se r ies atte n uators are pa r t of the ne w Surfpac product li.
Sinopower
SM2320NSA - N-Channel MOSFET
SM2320NSA ® N-Channel Enhancement Mode MOSFET Features · 20V/6.3A , RDS(ON)=23mW (max.) @ VGS=10V RDS(ON)=27mW (max.) @ VGS=4.5V RDS(ON)=40mW (max.).
Infineon
BSC320N20NS3G - Power-Transistor
BSC320N20NS3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistan.
Infineon
BSC12DN20NS3G - Power MOSFET
Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) .
Infineon
BSZ900N20NS3G - Power MOSFET
Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) .
GOOD-ARK
SSF20NS60F - 600V N-Channel MOSFET
Main Product Characteristics VDSS 600V RDS(on) 170mΩ(typ.) ID 20A Features and Benefits TO220F High dv/dt and avalanche capabilities 100% av.
Advanced Power Electronics
AP05G120NSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp. AP05G120NSW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Swi.
Silikron
SSF20NS65F - MOSFET
Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20A Features and Benefits: TO220F Feathers: .
ROHM
RFUH20NS3S - Super Fast Recovery Diode
Super Fast Recovery Diode RFUH20NS3S zSerise Super Fast Recovery zDimensions(Unit : mm) zApplications General rectification RFUH20 NS3S ձ zFeatu.
Agere Systems
A371-20NS - A371-Type Analog Uncooled Isolated DFB FastLight Laser Module
Data Sheet January 1999 A371-Type Analog Uncooled Isolated DFB FastLight ™ Laser Module s s s No thermoelectric cooler required Single- and double-i.
Sinopower
SM6020NSFP - N-Channel MOSFET
SM6020NSFP ® N-Channel Enhancement Mode MOSFET Features • 63V/80A b, RDS(ON)= 4.5mΩ (Max.) @ VGS=10V • 100% UIS + R Tested g • Reliable and Rug.
Sinopower
SM1A20NSU - N-Channel MOSFET
SM1A20NSU Features · 100V/40A, RDS(ON)= 28mW (Max.) @ VGS=10V RDS(ON)= 32mW (Max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Avai.
