20NS Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole

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SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE 0.8–4 GHz GENERAL INFORMATION The PI-800 Se r ies atte n uators are pa r t of the ne w Surfpac product li

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PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.co

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PD- 95764 IRF9520NSPbF IF9520NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/L

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BSC500N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc

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PD -91522A IRF9520NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operat

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Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc

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19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc

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• Lead-Free PD- 95592 IRL520NSPbF IRL520NLPbF www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www

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19-3348; Rev 0; 8/04 www.DataSheet4U.com 4A, 20ns, Dual MOSFET Drivers General Description The MAX5054–MAX5057 dual, high-speed MOSFET drivers sourc

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BSC350N20NSFD MOSFET OptiMOSTM3 Power-Transistor, 200 V Features • N-channel, normal level • 175 °C rated • Excellent gate charge x RDS(on) product (

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SM6020NSF Features · 63V/80A, RDS(ON)= 4.5mW (Max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Chan

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Type BSZ12DN20NS3 G $(*'#$%TM3 Power-Transistor Features 9 /2* ,* 7 &% ' .0% $ % $ $ .- 4&0 1 * .9 $ ) - - &+  - .0 , ++ &4&+ 9 6 $ &+ + &-

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SM1A20NSK ® N-Channel Enhancement Mode MOSFET Features · 100V/8A, RDS(ON)= 28mW(max.) @ VGS= 10V RDS(ON)= 32mW(max.) @ VGS= 4.5V · Reliable and Rug

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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BSC500N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zApplications General rectification zDimensions(Unit : mm) RFN20 NS3S zFeatures

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