20P Datasheet | Specifications & PDF Download

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H

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G5S12020PMT Silicon Carbide Schottky Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switchi

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120P3N-VB 120P3N-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID -30 V 11 mΩ 18 mΩ -45 A

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2MBI1400XXB120P-50 Power Module (X series) 1200V / 1400A / 2-in-1 package ■ Features Low V CE(sat) Low Inductance Module structure ■ Applications Inve

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OV2710 (rev 1E) datasheet PRODUCT SPECIFICATION 1/2.7 color CMOS 1080p/720p HD image sensor with OmniPixel3-HS™ technology 1 OV2710 color CMOS 108

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2MBI1800XXF120P-50 Power Module (X series) 1200V / 1800A / 2-in-1 package ■ Features Low V CE(sat) Low Inductance Module structure ■ Applications Inve

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2MBI1200XXE120P-50 Power Module (X series) 1200V / 1200A / 2-in-1 package ■ Features Low V CE(sat) Low Inductance Module structure ■ Applications Inve

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA06N120P IXTP06N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM T

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AP120P06D -60V P-Channel Enhancement Mode MOSFET Description The AP120P06D uses advanced APM-SGTⅠ technology to provide excellent RDS(ON), low gate ch

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TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power te

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IPP60R120P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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Metal-Oxide Varistors (MOVs) Radial Leaded Varistors > LV UltraMOV® Varistor Series LV UltraMOV® Varistor Series RoHS Phenolic Coated Epoxy Coated

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Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Description AP120P08PIT -80V P-Channel Enhancement Mode MOSFET The AP120P08P/T uses advanced trench technology to provide excellent RDS(ON), low gat

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Description AP120P08PIT -80V P-Channel Enhancement Mode MOSFET The AP120P08P/T uses advanced trench technology to provide excellent RDS(ON), low gat

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Ts

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2

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CMP120P03-VB CMP120P03-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.004 at VGS = - 10 V 0.0

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