24-MEMORY Datasheet | Specifications & PDF Download

PIC18(L)F2X/4XK40 PIC18(L)F2X/4XK40 Memory Programming Specification 1.0 OVERVIEW This programming specification describes an SPI-based programming m

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • THIN PROFILE PACKAGE • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Ra

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PIC16C9XX 8-Bit CMOS Microcontroller with LCD Driver Devices included in this data sheet: • PIC16C923 • PIC16C924 Available in Die Form Microcontrol

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Genesys Logic, Inc. GL3224 USB 3.0 Dual/Single LUN Memory Card Reader Controller Datasheet Revision 1.08 Jul. 21, 2017 GL3224 Datasheet Copyright Cop

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28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical

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AT29C1024 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (

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V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • HIGH TEMPERATURE REFLOW (+260°C) include

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • WIDE TEMPERATURE (-40°C~ +85°C) • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACT

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V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI

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MX35LF1G24AD MX35LF2G24AD MX35LF4G24AD 3V, 1G-bit/2G-bit/4G-bit Serial NAND Flash Memory MX35LFxG24AD P/N: PM2646 Macronix Proprietary 1 REV. 1.0,

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K word Boot B

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • HIGH CURRENT DISCHARGE (UP TO 50mA) • IDEAL AS MEMORY BACK-UP POWER SUPPLY • SUITABLE

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CAPACITOR • THIN PROFILE PACKAGE • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Ra

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Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • LOW ESR • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltag

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Memory Back-Up Capacitors FEATURES • SMALLER THAN NEXA SERIES • DOUBLE LAYER CONSTRUCTION • SHORT TERM POWER SOURCE (UP TO 50mA) • SUITABLE FOR FLOW S

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32Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q032A11E124xx, N25Q032A1

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MX35LF1G24AD MX35LF2G24AD MX35LF4G24AD 3V, 1G-bit/2G-bit/4G-bit Serial NAND Flash Memory MX35LFxG24AD P/N: PM2646 Macronix Proprietary 1 REV. 1.0,

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V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI

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