P28F010 Datasheet, Memory, Intel

P28F010 Features

• Memory g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Stan

PDF File Details

Part number:

P28F010

Manufacturer:

Intel

File Size:

395.25kb

Download:

📄 Datasheet

Description:

1024k (128k x 8) cmos flash memory.

TAGS

P28F010

Intel

📁 Related Datasheet

P28F001BX - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY (Intel)
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L.

P28F002BC - 2-MBIT (256K x 8) BOOT BLOCK FLASH MEMORY (Intel)
E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n.

P28F020 - 256K x 8 CMOS FLASH MEMORY (Intel)
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase  2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µS .

P28F512 - 512K (64K x 8) CMOS FLASH MEMORY (Intel)
28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical B.

P2803BMG - N-Channel MOSFET (UNIKC)
P2803BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 28mΩ @VGS = 10V ID 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 .

P2803HVG - N-Channel MOSFET (UNIKC)
P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V ID 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA .

P2803NVG - N&P-Channel MOSFET (UNIKC)
P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P .

P2803NVG - N-&P-Channel MOSFET (NIKO-SEM)
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(O.

P2804BDG - N-Channel MOSFET (UNIKC)
P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25.

P2804BDG - N-Channel MOSFET (NIKO-SEM)
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m.