256-Byte Datasheet | Specifications & PDF Download

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GT23SC4442 ADVANCED GT23SC4442 256 BYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY www.giantec-semi.com a0 1/20 GT23SC4442 Table

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Preliminary FM3808 256Kb Bytewide FRAM w/ Real-Time Clock Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,752 x 8 bits • High Endu

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SMCxxxAF 32 Mbyte, 64 Mbyte, 128 Mbyte, 256 Mbyte and 512 Mbyte 3.3 V / 5 V supply CompactFlash™ card Features ■ Custom-designed, highly-integrated m

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SMCxxxAF 32 Mbyte, 64 Mbyte, 128 Mbyte, 256 Mbyte and 512 Mbyte 3.3 V / 5 V supply CompactFlash™ card Features ■ Custom-designed, highly-integrated m

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S70GL02GS 2 Gbit (256 MBytes), 3.0 V Flash Memory General Description The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on

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X28HC256 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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Chip Card & Security ICs SLE 5542 Intelligent 256-Byte EEPROM with Write Protection function and Programmable Security Code Short Product Information

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www.DataSheet.co.kr Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM  Organized as 32,768 x

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X28HC256 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with

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Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data

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S70GL02GT 2-Gbit (256-Mbyte) 3.0V Flash Memory General Description The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45

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Features • • • • • • • • • • • • Fast Read Access Time - 100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and

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www.DataSheet.co.kr Features • • • • • Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fa

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P89LPC920/921/922 8-bit microcontrollers with two-clock 80C51 core 2 kB/4 kB/8 kB 3 V low-power Flash with 256-byte data RAM Rev. 06 — 21 November 200

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Features • • • • • • • • Single Power Supply Read and Write Voltage, 5V ± 5% High Performance 200 ns Maximum Access Time 6 ms Typical Sector Write C

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FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F

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Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data

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