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4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8

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4Gb: x8, x16 Automotive DDR3L SDRAM Description Automotive DDR3L SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Descript

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2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x

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CY7C4425/4205/4215 CY7C4225/4235/4245 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Features ■ High speed, low power, first-in first-out (FIFO) memories

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CY7C4425/4205/4215 CY7C4225/4235/4245 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Features ■ High speed, low power, first-in first-out (FIFO) memories

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INTEGRATED CIRCUITS 8XC54/58 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family 8K–64K/256–1K OTP/ROM/ROMless, l

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M93C86, M93C76, M93C66 M93C56, M93C46 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE® Serial Access EEPROM FEATURES SUMMARY s

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1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 32 Meg x 4 x 8 banks MT41K128M8 – 16 Meg x 8 x 8 banks MT41K64M16 – 8 Meg x 16 x 8

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CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features • High-speed, low-power, first-in

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CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features • High-speed, low-power, first-in

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CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features • High-speed, low-power, first-in

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CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features • High-speed, low-power, first-in

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CY7C419/21/25/29/33256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features ■ Asynchronous first-i

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CY7C4425/4205/4215 CY7C4225/4235/4245 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Features ■ High speed, low power, first-in first-out (FIFO) memories

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CY7C419/21/25/29/33256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features ■ Asynchronous first-i

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93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization (93C06) - 64

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CY7C4425/4205/4215 CY7C4225/4235/4245 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Features ■ High speed, low power, first-in first-out (FIFO) memories

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CY7C419/21/25/29/33256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features ■ Asynchronous first-i

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CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features • High-speed, low-power, first-in

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www.DataSheet.co.kr PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Re

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