AT27C040 Features • Fast Read Access Time - 70 n.
27C040 - 4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM
NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM February 1999 NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General De.27C040 - 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM February 1999 NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General De.HT27C040 - CMOS 512K x 8-Bit OTP EPROM
HT27C040 CMOS 512K´8-Bit OTP EPROM Features · Operating voltage: +5.0V · Programming voltage - VPP=12.5V±0.2V - VCC=6.0V±0.2V · High-reliability CMOS .27C040 - 4-Megabit 512K x 8 OTP EPROM
AT27C040 Features • Fast Read Access Time - 70 ns • Low Power CMOS Operation • 100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages .AM27C040 - 4 Megabit (512 K x 8-Bit) CMOS EPROM
FINAL Am27C040 4 Megabit (512 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Available in speed options as fast as 90 ns s Lo.AT27C040 - 4-Megabit 512K x 8 OTP EPROM
AT27C040 Features • Fast Read Access Time - 70 ns • Low Power CMOS Operation • 100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages .FM27C040 - High Performance CMOS EPROM
FM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM .. ....... January 2000 FM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM .NM27C040 - 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM February 1999 NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General De.SMJ27C040 - UVEPROM
UVEPROM Austin Semiconductor, Inc. 4 MEG UVEPROM UV Erasable Programmable Read-Only Memory AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-91752 • MIL.TMS27C040 - Programmable ROM
D Organization . . . 524 288 by 8 Bits D Single 5-V Power Supply D Industry Standard 32-Pin Dual In-Line Package and 32-Lead Plastic Leaded Chip Carri.