2M-Bits datasheet | Specifications & PDF Download

EDS5104ABTA - 512M bits SDRAM

PRELIMINARY DATA SHEET 512M bits SDRAM EDS5104ABTA (128M words × 4 bits) EDS5108ABTA (64M words × 8 bits) EDS5116ABTA (32M words × 16 bits) Descripti

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Samsung

K9K8G08U1M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI

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Sanyo

LC33832ML-70 - 256 K (32768 words X 8 bits) Pseudo-SRAM

Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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ISSI

IS42VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

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Sanyo

LC331632M-10 - 512K (32768 words X 16 bits) Pseudo-SRAM

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BELLING

BL24CM2A - 2M-Bits EEPROM

BL24CM2A 2M bits (262,144×8) Features ⚫ Compatible with all I2C bidirectional data transfer protocol ⚫ Memory array: – 2048 Kbits (256 Kbytes) of EEP

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ISSI

IS42VM32800M - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45VM32800M 2M x 32Bits x 4Banks Mobile Synchronous DRAM Advanced Information Description These IS42/45VM32800M are mobile 268,435,456 bits CMOS S

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Hynix Semiconductor

HYMD132645BL8-K - 32M x 64 bits Unbuffered DDR SDRAM DIMM

DESCRIPTION 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD132645B(L)8-M/K/H/L Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat

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ISSI

IS43LR32800F - 2M x 32Bits x 4Banks Mobile DDR SDRAM

IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DR

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ISSI

IS42SM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

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Elpida Memory

EDE5108AGSE - (EDE510xAGSE) 512M bits DDR2 SDRAM

PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AGSE (128M words × 4 bits) EDE5108AGSE (64M words × 8 bits) Description The EDE5104AGSE is a 512M

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ISSI

IS45VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

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Elpida Memory

EDE5104ABSE - 512M bits DDR2 SDRAM

DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description The

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Elpida Memory

EDJ4208EFBG - 512M words x 8 bits 4G bits DDR3L SDRAM

COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b

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BELLING

BL25CM2A - 2M-Bits EEPROM

BL25CM2A 2M bits (262,144×8) Features ⚫ Serial Peripheral Interface (SPI) data transfer ⚫ Write: protocol – Write within 8 ms ⚫ Memory array: –

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ISSI

IS42VM16800F - 2M x 16Bits x 4Banks Mobile Synchronous DRAM

IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized a

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Sanyo