EDS5104ABTA (Elpida Memory)
512M bits SDRAM
PRELIMINARY DATA SHEET
512M bits SDRAM
EDS5104ABTA (128M words × 4 bits) EDS5108ABTA (64M words × 8 bits) EDS5116ABTA (32M words × 16 bits)
Descripti
(40 views)
BL24CM2A (BELLING)
2M-Bits EEPROM
BL24CM2A 2M bits (262,144×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 2048 Kbits (256 Kbytes) of EEP
(39 views)
K9K8G08U1M (Samsung)
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M K9F4G08U0M
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI
(37 views)
LC331632M-10 (Sanyo)
512K (32768 words X 16 bits) Pseudo-SRAM
(37 views)
BL25CM2A (BELLING)
2M-Bits EEPROM
BL25CM2A 2M bits (262,144×8)
Features
⚫ Serial Peripheral Interface (SPI) data transfer ⚫ Write:
protocol
– Write within 8 ms
⚫ Memory array:
–
(36 views)
IS42VM32800E (ISSI)
2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32800E
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou
(33 views)
IS42VM32800M (ISSI)
2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45VM32800M
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Advanced Information Description
These IS42/45VM32800M are mobile 268,435,456 bits CMOS S
(32 views)
EDJ4208EFBG (Elpida Memory)
512M words x 8 bits 4G bits DDR3L SDRAM
COVER
PRELIMINARY DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b
(31 views)
LC33832ML-70 (Sanyo)
256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
(30 views)
EDD5104ADTA (Elpida Memory)
512M bits DDR SDRAM
DATA SHEET
512M bits DDR SDRAM
EDD5104ADTA (128M words × 4 bits) EDD5108ADTA (64M words × 8 bits) EDD5116ADTA (32M words × 16 bits)
Description
The E
(29 views)
IS42SM32800E (ISSI)
2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32800E
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou
(28 views)
IS42S32800 (ISSI)
2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
IS42S32800
2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
P JANUARY 2008
FEATURES
• Concurrent auto precharge • Clock rate:166/143 MHz •
(28 views)
TC58256AFT (Toshiba Semiconductor)
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
www.DataSheet4U.com
www.DataSheet4U.com
(28 views)
EDE5104ABSE (Elpida Memory)
512M bits DDR2 SDRAM
DATA SHEET
512M bits DDR2 SDRAM
EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits)
Description
The
(27 views)
EDE5108AGSE (Elpida Memory)
(EDE510xAGSE) 512M bits DDR2 SDRAM
PRELIMINARY DATA SHEET
512M bits DDR2 SDRAM
EDE5104AGSE (128M words × 4 bits) EDE5108AGSE (64M words × 8 bits)
Description
The EDE5104AGSE is a 512M
(27 views)
W9812G6JH (Winbond)
2M X 4 BANKS X 16 BITS SDRAM
www.DataSheet.co.kr
W9812G6JH 2M × 4 BANKS × 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(27 views)
LC331632M-80 (Sanyo)
512K (32768 words X 16 bits) Pseudo-SRAM
(26 views)
HYMD132645BL8-K (Hynix Semiconductor)
32M x 64 bits Unbuffered DDR SDRAM DIMM
DESCRIPTION
32Mx64 bits
Unbuffered DDR SDRAM DIMM
HYMD132645B(L)8-M/K/H/L
Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat
(25 views)
IS43LR32800F (ISSI)
2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32800F
2M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DR
(25 views)
EDE5108GBSA (Elpida Memory)
512M bits DDR-II SDRAM
PRELIMINARY DATA SHEET
512M bits DDR-II SDRAM
EDE5104GBSA (128M words × 4 bits) EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits)
De
(25 views)
