2M-Bits datasheet | Specifications & PDF Download

W9412G6IH - 2M X 4 BANKS X 16 BITS DDR SDRAM

www.DataSheet.co.kr W9412G6IH 2M × 4 BANKS × 16 BITS DDR SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

Rating: 1 ★ (11 votes)

Winbond

W9812G6KH - 2M x 4-BANKS x 16-BITS SDRAM

W9812G6KH 2M  4 BANKS  16 BITS SDRAM Table of Contents- 1. GENERAL DESCRIPTION

Rating: 1 ★ (9 votes)

Toshiba

TC58DVM92A5TA00 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM

TC58DVM92A5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E2PROM DESCRIPTION The device is a single 3

Rating: 1 ★ (8 votes)

ISSI

IS45VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

Rating: 1 ★ (7 votes)

Toshiba Semiconductor

TC58FV321 - (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY

TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTI

Rating: 1 ★ (7 votes)

Elpida Memory

EDJ4208EFBG - 512M words x 8 bits 4G bits DDR3L SDRAM

COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b

Rating: 1 ★ (7 votes)

ISSI

IS46LR32800G - 2M x 32Bits x 4Banks Mobile DDR SDRAM

IS43LR32800G, IS46LR32800G 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800G is 268,435,456 bits CMOS Mobile Double Data Rate Syn

Rating: 1 ★ (6 votes)

ISSI

IS46LR32800F - 2M x 32Bits x 4Banks Mobile DDR SDRAM

IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DR

Rating: 1 ★ (6 votes)

ISSI

IS46LR16800G - 2M x 16Bits x 4Banks Mobile DDR SDRAM

IS43/46LR16800G 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16800G is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DR

Rating: 1 ★ (6 votes)

Elpida Memory

EDE5108GBSA - 512M bits DDR-II SDRAM

PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104GBSA (128M words × 4 bits) EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits) De

Rating: 1 ★ (6 votes)

ISSI

IS42VM32800M - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45VM32800M 2M x 32Bits x 4Banks Mobile Synchronous DRAM Advanced Information Description These IS42/45VM32800M are mobile 268,435,456 bits CMOS S

Rating: 1 ★ (6 votes)

Hynix Semiconductor

HYMD132645BL8-H - 32M x 64 bits Unbuffered DDR SDRAM DIMM

DESCRIPTION 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD132645B(L)8-M/K/H/L Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat

Rating: 1 ★ (5 votes)

ISSI

IS42VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

Rating: 1 ★ (5 votes)

ISSI

IS42RM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou

Rating: 1 ★ (5 votes)

Toshiba

TC58DVM92A5TAI0 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM

TC58DVM92A5TAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E2PROM DESCRIPTION The device is a single 3

Rating: 1 ★ (5 votes)

Elpida Memory