Winbond
W9412G6IH - 2M X 4 BANKS X 16 BITS DDR SDRAM
www.DataSheet.co.kr
W9412G6IH 2M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(36 views)
BELLING
BL24CM2A - 2M-Bits EEPROM
BL24CM2A 2M bits (262,144×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 2048 Kbits (256 Kbytes) of EEP
(32 views)
Elpida Memory
EDJ4208EFBG - 512M words x 8 bits 4G bits DDR3L SDRAM
COVER
PRELIMINARY DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b
(22 views)
Zbit
ZB25WD20B - 2M-BITSERIAL NOR FLASH
ZB25WD40B/20B
1.8/3.3V 4M/2M-BIT SERIAL NOR FLASH WITH DUAL SPI
Zbit Semiconductor, Inc.
Preliminary Datasheet
1
ZB25WD40B/20B
Contents
FEATURES.
(21 views)
Winbond
W9812G6KH - 2M x 4-BANKS x 16-BITS SDRAM
W9812G6KH
2M 4 BANKS 16 BITS SDRAM
Table of Contents-
1. GENERAL DESCRIPTION
(19 views)
Elpida Memory
EDD5108AFTA - 512M bits DDR SDRAM
DATA SHEET
512M bits DDR SDRAM
EDD5108AFTA (64M words × 8 bits) EDD5116AFTA (32M words × 16 bits)
Description
The EDD5108AFTA and the EDD5116AFTA are
(18 views)
Toshiba
TC58DVM92A5TAI0 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM
TC58DVM92A5TAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3
(17 views)
Toshiba
TC58DVM92A5TA00 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM
TC58DVM92A5TA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3
(17 views)
ISSI
IS45VM32800M - 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45VM32800M
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Advanced Information Description
These IS42/45VM32800M are mobile 268,435,456 bits CMOS S
(17 views)
Sanyo
LC33832ML-80 - 256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
(16 views)
ISSI
IS42VM32800M - 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45VM32800M
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Advanced Information Description
These IS42/45VM32800M are mobile 268,435,456 bits CMOS S
(16 views)
Hynix Semiconductor
HYMD132645B8-L - 32M x 64 bits Unbuffered DDR SDRAM DIMM
DESCRIPTION
32Mx64 bits
Unbuffered DDR SDRAM DIMM
HYMD132645B(L)8-M/K/H/L
Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat
(15 views)
Hynix Semiconductor
HYMD132645BL8-H - 32M x 64 bits Unbuffered DDR SDRAM DIMM
DESCRIPTION
32Mx64 bits
Unbuffered DDR SDRAM DIMM
HYMD132645B(L)8-M/K/H/L
Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat
(15 views)
Samsung semiconductor
K9F4G08U0M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M K9F4G08U0M
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI
(15 views)
Sanyo
LC331632M-12 - 512K (32768 words X 16 bits) Pseudo-SRAM
(15 views)
Toshiba Semiconductor
TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
www.DataSheet4U.com
www.DataSheet4U.com
(15 views)
Elpida Memory
EDD5116ADTA - 512M bits DDR SDRAM
DATA SHEET
512M bits DDR SDRAM
EDD5104ADTA (128M words × 4 bits) EDD5108ADTA (64M words × 8 bits) EDD5116ADTA (32M words × 16 bits)
Description
The E
(15 views)
Elpida Memory
EDD5108ADTA-E - 512M bits DDR SDRAM
PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5104ADTA-E (128M words × 4 bits) EDD5108ADTA-E (64M words × 8 bits) EDD5116ADTA-E (32M words × 16 bits)
(15 views)
Elpida Memory
EDD5104ADTA-E - 512M bits DDR SDRAM
PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5104ADTA-E (128M words × 4 bits) EDD5108ADTA-E (64M words × 8 bits) EDD5116ADTA-E (32M words × 16 bits)
(15 views)
Winbond
W9812G6GH - 2M X 4 BANKS X 16 BITS SDRAM
www.DataSheet.co.kr
W9812G6GH 2M X 4 BANKS X 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(15 views)
