K9K8G08U1M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.
Its NAND cell provides the most costeffective solution for the solid state application market.
A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed
K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K9K8G08U1M Features
* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
* Page Read Operation - Page Size : (2K + 64)Byte
