2N1 Datasheet | Pinout, Features, Price Comparison & PDF

176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

SSCE5V042N1 SSCE5V042N1 Lo BVV Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration

2N1483, 2N1484, 2N1485, NPN Medium Power Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/180 • TO-8 Package • Ideal

2N 1529 thru 2N 1538 (GERMANIUM) 2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A PNP germanium power transistors for switching and amplifier applicatio

RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufac

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage

Standard Rectifier Module Phase leg Part number MDD142-12N1 2 13 MDD142-12N1 VRRM I FAV VF = 2x 1200 V = 165 A = 1.05 V Backside: isolated Featur

Elektronische Bauelemente SPR42 10-C 42A, 100V, RDS(O ) 24mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie

1990 2N (SILICON) Collector connected to case NPN silicon transistor designed for driving neon display tubes. MAXIMUM RATINGS Rating Collector-Bas

2N1303 2N1305 2N1307 2N1309 GERMANIUM PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1

6 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh