2N1 Datasheet | Specifications & PDF Download

Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

(5 views)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

(5 views)

() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

(5 views)

2N 1539 thru 1548 2N (GERMANIUM) 2N1539A thru 2N1542A, 2N1544A thru 2N1547A PNP germanium power transistors for switching and amplifier applicati

(4 views)

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V

(4 views)

2N 1162 thru 1167 2N (GERMANIUM) 2N1162A thru 2Nl167A PNP germanium power transistors for switching and amplifier applications in high reliabilit

(3 views)

2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed sw

(3 views)

SSCE5V042N1 SSCE5V042N1 Lo BVV Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration

(3 views)

1970 2N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~I CASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applic

(3 views)

2N 1561 (GERMANIUM) 2N1562 2N1692 2N1693 PNP germanium mesa transistors for VHF power amplifier applications. CASE 23 CASE 24 (TO·l07) 2N1561 2N156

(3 views)

2N 1529 thru 2N 1538 (GERMANIUM) 2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A PNP germanium power transistors for switching and amplifier applicatio

(3 views)

FQP32N12V2/FQPF32N12V2 QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

(3 views)

GSM02N15 150V N Channel MOSFET Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

(3 views)

Semiconductor RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate powe

(3 views)

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10

(3 views)

RFP2N12L Data Sheet April 1999 File Number 2874.2 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement m

(3 views)

(3 views)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D

(3 views)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994

(3 views)

2N1303 2N1305 2N1307 2N1309 GERMANIUM PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1

(3 views)