2N1 Datasheet | Specifications & PDF Download

High Voltage Standard Rectifier Module Single Diode MDO500-22N1 VRRM = I FAV = VF = 2200 V 560 A 0,98 V Part number MDO500-22N1 2 3 Backsid

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() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

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Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage

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N-Channel Trench Power MOSFET CS72N12\ CSN72N12 General Description The 72N12 is N-channel MOS Field Effect Transistor designed for high current swi

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2N1303 2N1305 2N1307 2N1309 GERMANIUM PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V =

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @

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PROFET® BTS612N1 Smart Two Channel High-Side Power Switch Features  Overload protection  Current limitation  Short circuit protection  Thermal sh

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L NVBG022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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1 Watt o Ultra-Miniature Size o Unregulated Output www.DataSheet4U.com 7 Pin SIL Package Z o 1000VDC Isolation o 3000VDC Isolation Option (add Suffi

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

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High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Tes

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DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24

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MY12N10D 100V N-Channel Enhancement Mode MOSFET General Description The MY12N10D use advanced trench technology and design to provide excellent RDS(O

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