2N1 Datasheet | Specifications & PDF Download

() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V =

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Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24

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176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFK32N100Q3 IXFX32N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25

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() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

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N-Channel Trench Power MOSFET CS72N12\ CSN72N12 General Description The 72N12 is N-channel MOS Field Effect Transistor designed for high current swi

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www.DataSheet4U.com IGBT VCES IC25 24 A 24 A VCE(sat) 3.5 V 4.0 V IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V Preliminary Data Sheet Symbol

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1 Watt o Ultra-Miniature Size o Unregulated Output www.DataSheet4U.com 7 Pin SIL Package Z o 1000VDC Isolation o 3000VDC Isolation Option (add Suffi

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High Voltage IGBT with Diode Advance Technical Information IXGX 32N170H1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Symbol Tes

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Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR32N100Q3 D G S Symbol VDSS VDGR

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L NVBG022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate

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Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) m

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V

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