2N1 Datasheet | Specifications & PDF Download

2N 1529 thru 2N 1538 (GERMANIUM) 2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A PNP germanium power transistors for switching and amplifier applicatio

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2N1870A-2N1874A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTFIERS FEATURES  Available as “HR” (h

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EMD12N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg

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SSCE12V22N1 SSCE12V22N1 Lo BVV Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration The

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2N 1561 (GERMANIUM) 2N1562 2N1692 2N1693 PNP germanium mesa transistors for VHF power amplifier applications. CASE 23 CASE 24 (TO·l07) 2N1561 2N156

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PROFET® BTS 712 N1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-P

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com Central TM

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DCM™ DC-DC Converter DCM4623xD2N13C8yzz S ® C US C NRTL US Isolated, Regulated DC Converter Features & Benefits • Isolated, regulated DC-DC converter

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www.DataSheet.co.kr IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate drive

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UNISONIC TECHNOLOGIES CO., LTD 82NXX VOLTAGE DETECTORS 3 CMOS IC 3  DESCRIPTION The UTC 82NXX series are highly precise, low power consumption volt

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UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power

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UNISONIC TECHNOLOGIES CO., LTD UTT2N10 Preliminary 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET (N-CHANNEL)  DESCRIPTION The UTC UTT2N10 is a compl

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STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

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