2N1 Datasheet | Specifications & PDF Download

IPB042N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

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PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l F

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176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

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2N 1539 thru 1548 2N (GERMANIUM) 2N1539A thru 2N1542A, 2N1544A thru 2N1547A PNP germanium power transistors for switching and amplifier applicati

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2N 1539 thru 1548 2N (GERMANIUM) 2N1539A thru 2N1542A, 2N1544A thru 2N1547A PNP germanium power transistors for switching and amplifier applicati

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2N 1162 thru 1167 2N (GERMANIUM) 2N1162A thru 2Nl167A PNP germanium power transistors for switching and amplifier applications in high reliabilit

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2N 1539 thru 1548 2N (GERMANIUM) 2N1539A thru 2N1542A, 2N1544A thru 2N1547A PNP germanium power transistors for switching and amplifier applicati

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com Central TM

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

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1120 2N (GERMANIUM) PNP germanium power transistor for military and industrial power applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage

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TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

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2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal ca

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www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta

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2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (a T^ = 25

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested

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