2N320 Datasheet | Specifications & PDF Download

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2N3209 (SILICON) PNP SILICON ANNULAR TRANSISTOR designed for medium·speed saturated switching applications. • Low Collector· Emitter Saturation Volta

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3 - 3.5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiE

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3 - 3.5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiE

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

2N3209 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

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Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV

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2N3202 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

Rating: 1 ★ (3 votes)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209CSM HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT P

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Rating: 1 ★ (3 votes)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209DCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED

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2N319 thru 2N321 (Germanium) CASE 31(1) (TO-S) \ . ~ Base connected to case PNP germanium transistors for audio amplifier and low-frequency switch

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Rating: 1 ★ (2 votes)

2N3209X MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH R

Rating: 1 ★ (2 votes)