2N5 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Volta

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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500V N-Channel MOSFETs PDD02N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATIN

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2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium power transistor for non-critical power amplifier and power switching applications re- CASE 11 (TO-

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MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are prod

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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www.DataSheet4U.com PD - 94099A IRFP32N50K SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Po

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GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-11 Features I Dual Control Voltages I Low Insertion Loss I 8 Lead Hermetic Sur

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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Polar2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH42N50P2 IXFT42N50P2 VDSS = ID25 = RDS(on) ≤ 50

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FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 1

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