2N524 Datasheet | Specifications & PDF Download

Process 90 2N5245-47 N-Channel JFETs General Description The 2N5245 thru 2N5247 series of N-channel JFETs is designed for common-source or common-g

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Process 90 2N5245-47 N-Channel JFETs General Description The 2N5245 thru 2N5247 series of N-channel JFETs is designed for common-source or common-g

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Process 90 2N5245-47 N-Channel JFETs General Description The 2N5245 thru 2N5247 series of N-channel JFETs is designed for common-source or common-g

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION ·With TO-3 package ·High breakdo

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2N5240 NPN Power Silicon Transistor Features  High Voltage: VCEO(SUS) = 300 V min.  Wide Area of Safe Operation  Designed for use in series regulat

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2N5245 2N5245 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficien

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Dev

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2NS24 thru 2NS27(GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. Available for military an

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w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5240 DESCRIPTION ·High Voltage- : VCEO(SUS)= 300V(Min) ·Wide Are

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www.DataSheet4U.com

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com OUTSTANDING SUP

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2N5246 2N5246 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficien

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Dev

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www.DataSheet4U.com

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Dev

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com OUTSTANDING SUP

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