2N5661 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown volta

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAX

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Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5661J) • JANTX level (2N5661JX) • JA

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2N5661 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown volta

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