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2N5885 NPN SILICON POWER TRANSISTORS

2N5883-2N5884 – PNP 2N5885-2N5886 – NPN High-.

NPN Transistor

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain- : hFE= 20- @IC= 10

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NPN SILICON POWER TRANSISTORS

2N5883-2N5884 – PNP 2N5885-2N5886 – NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON POWER TRANSISTO

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COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

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COMPLEMENTARY SILICON POWER TRANSISTORS

2N5883 2N5884 PNP 2N5885 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT

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NPN MULTI - EPITAXIAL POWER TRANSISTOR

2N5885 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. MECHANICAL DATA

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Complementary Silicon High-Power Transistors

www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors C

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