2N61 Datasheet | Specifications & PDF Download

2N6151 (SILICON) thru 2N6156 O-----fO~ o SILICON BIDIRECTIONAL THYRISTORS designed primarily for full·wave ac control applications, such as ligh

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining V

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2N6151 (SILICON) thru 2N6156 O-----fO~ o SILICON BIDIRECTIONAL THYRISTORS designed primarily for full·wave ac control applications, such as ligh

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_________________________________ File No. 562 OOcn5LJO Solid State Division Power Transistors 2N6178 2N6180 2N6179 2N6181 /.9 .c~/// Plastic TOoS

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2N6116-2N6118 High-reliability discrete products and engineering services since 1977 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS FEATURES  Availa

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® 2N6111 SILICON PNP SWITCHING TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR APPLICATIONS: s LINEAR AND SWITCHING INDUSTRIAL

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290

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Standard Optional Power Transistors TO-220 Case TO-220 TYPE NO. IC (A) MAX 4.0 4.0 4.0 7.0 7.0 7.0 7.0 2N6040 2N6041 2N6042 10 10 10 10 10 16 2N6124

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6111 2N6111 PNP PLASTIC POWER TR

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Pla

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2N6116-2N6118 High-reliability discrete products and engineering services since 1977 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS FEATURES  Availa

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2N350A, 2N351 A, 2N376A (continued) OUTPUT CURRENT versus EMITTER·DRIVE VOLTAGE 5.0 II 4.5 I 1I / / '- 2N 7'A~ / J '/ / / / '- 2N 5IA I '// '-2

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TR

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File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~

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_________________________________ File No. 562 OOcn5LJO Solid State Division Power Transistors 2N6178 2N6180 2N6179 2N6181 /.9 .c~/// Plastic TOoS

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2N6136 (SILICON) The RF Lin.e NPN SILICON RF POWER TRANSISTOR · ..designed for 12.5 Volt UHF large'signal amplifier applications in industrial and co

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10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6107 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining V

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