2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.
2N6561 - Bipolar NPN Device
2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .2N6561 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device .