2N6790 Datasheet | Specifications & PDF Download

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field

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2N6788U and 2N6790U Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF220 200V RDS(on) ID 0.

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2N6788 and 2N6790 Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF220 200V RDS(on) ID 0.

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