Datasheet Summary
Data Sheet December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit.
Features
- 3.5A, 200V
- rDS(ON) = 0.800Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
Ordering Information
PART NUMBER 2N6790 PACKAGE TO-205AF...
