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2N6796
Data Sheet November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
• 8A, 100V • rDS(ON) = 0.
2N6796 Datasheet
