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2N6796 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: 2N6796 Data Sheet November 1998 File Number 1594.2 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

2N6796 datasheet preview

Datasheet Details

Part number	2N6796
Manufacturer	Intersil (now Renesas)
File Size	140.77 KB
Description	N-Channel Power MOSFET
Datasheet	2N6796_IntersilCorporation.pdf

Key Features

8A, 100V.
rDS(ON) = 0.180Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device Ordering Information PART NUMBER 2N6796.

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More Datasheets from Intersil (now Renesas)

Part Number	Description
2N6975	N-Channel IGBTs
2N6976	N-Channel IGBTs
2N6977	N-Channel IGBTs
2N6978	N-Channel IGBTs

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