2N6796 Description
2N6796 Data Sheet November 1998 File Number 1594.2 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated...
2N6796 Key Features
- 8A, 100V
- rDS(ON) = 0.180Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”