2N726 Datasheet | Specifications & PDF Download

IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679M Features •

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IRHF7230 (JANSR2N7262) Radiation Hardened Power MOSFET Thru-Hole TO-205AF (TO-39) 200V, 5.5A, N-channel, Rad Hard HEXFET™ Technology PD-90672H Featu

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IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features 

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PD - 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technol

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PD - 90672C IRHF7230 IRHF8230 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7262 ® HEXFET TRANSISTOR JANSH2N7262 [REF:MIL-PRF-19500/601] N CHANNEL 200V

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PD - 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technol

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2N726 (SILICON) 2N727 PNP SILICON ANNULAR TRANSISTORS · .. designed for general purpose audio amplifier applications. • Co ector·Emitter Breakdown Vo

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