JANSH2N7262 Datasheet - International Rectifier

JANSH2N7262 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

PD - 90672C IRHF7230 IRHF8230 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7262 ® HEXFET TRANSISTOR JANSH2N7262 [REF:MIL-PRF-19500/601] N CHANNEL 200Volt, 0.35Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electric.

JANSH2N7262 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating S

JANSH2N7262 Datasheet (302.39 KB)