2SA1306A Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION ·With TO-220F

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