2SA1931 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to T

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: V

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