Datasheet Summary
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
High-Current Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) =
- 0.4 V (max)
- High-speed switching time: tstg = 1.0 µs (typ.)
- plementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating
- 60
- 50
- 7
- 5
- 1 2.0 20 150
- 55 to 150
Electrical Characteristics (Tc =...
