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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
2SA1933
High-Current Switching Applications
Industrial Applications Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−60 −50 −7 −5 −1 1.8 150 −55 to 150
V V V A A W °C °C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g.
2SA1933 Datasheet
