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2SA1937 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

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Datasheet Details

Part number 2SA1937
Manufacturer Toshiba
File Size 163.77 KB
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet download datasheet 2SA1937 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm • High voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −600 −600 −7 −0.5 −1 −0.25 1 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7B1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.