2SA1934 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1934
Manufacturer	Toshiba
File Size	148.53 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1934 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications 2SA1934 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC5176 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −100 −80 −7 −5 −8 −1 1.8 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.