Datasheet Details
| Part number | 2SA1932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.99 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1932-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1932.
| Part number | 2SA1932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.99 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1932-INCHANGE.pdf |
|
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·High collector breakdown voltage ·Complementary to 2SC5174 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.1 A 1.8 W 25 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1932 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1932 | Silicon PNP Transistor | Toshiba Semiconductor |
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