2SA1943 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (m

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-

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2SA1943 ® Pb Free Plating Product 2SA1943 Pb 150 Watt Silicon PNP Power Transistors DESCRIPTION ¡¤ With TO-3PL package ¡¤ Complement to type 2SC

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SEMICONDUCTOR 2SA1943BL Series Silicon PNP triple diffusion planar transistor -15A/-230V/150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (m

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2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High

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PNP Epitaxial Silicon Transistor FJL4215, 2SA1943 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30

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PNP Silicon PNP Epitaxial Transistor R 2SA1943B z z：VCEO=250V (min) z 2SC5200B z 100W z（RoHS） APPLICATIONS z Power Amplifier Applications FEAT

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PNP Silicon PNP Epitaxial Transistor R 2SA1943A  ：VCEO=-230V (min)  2SC5200A  100W （RoHS） Package TO-3PL（T） APPLICATIONS  Power Ampli

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UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Complementary to UTC 2SC5200 * Recommended

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = -230 V

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