2SA496 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(s

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.

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