: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM .
INCHANGE
2SA496 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(s.
Toshiba
2SA496 - Silicon PNP Transistor
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ..