2SB1106 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=100

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ·With TO-220C package ·DARLINGT

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