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2SB1106 Datasheet | Specifications & PDF Download

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2SB1106 PNP Transistor

isc Silicon PNP Darlington Power Transistor DESCR.

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2SB1106 - PNP Transistor

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=100
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