2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FRE.
2SC1061 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= .2SC1061 - NPN EPITAXIAL SILICON TRANSISTOR
2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Character.