C2238 (Inchange Semiconductor)
2SC2238
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION ¡¤ With TO-220 package ¡¤ Complem
(31 views)
2SC2238 (Toshiba)
Silicon NPN Transistor
2SC2238 2SC2238A
I2SC2238B
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES
• Hi
(29 views)
2SC2238A (Toshiba)
Silicon NPN Transistor
2SC2238 2SC2238A
I2SC2238B
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES
• Hi
(17 views)
2SC2238 (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION ·With TO-220
(16 views)
2SC2238A (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION ·With TO-220
(13 views)
2SC2238B (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2238 2SC2238A 2SC2238B
DESCRIPTION ·With TO-220
(13 views)
2SC2238B (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-220 packaging ·Complement to Type 2SA968 A B ·Minimum Lot-to-Lot variations for robust device
p
(13 views)
2SC2238B (Toshiba)
Silicon NPN Transistor
2SC2238 2SC2238A
I2SC2238B
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES
• Hi
(12 views)
2SC2238 (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA
(12 views)
2SC2238A (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-220 packaging ·Complement to Type 2SA968 A B ·Minimum Lot-to-Lot variations for robust device
p
(12 views)
2SC2238B (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO=200V ·Good Linearity of hFE ·Complement to Type 2SA968B ·
(11 views)
