Power Transistors 2SC3507 Silicon NPN triple diffu.
C3507 - 2SC3507
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7.2SC3507 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot.2SC3507 - Silicon NPN Transistor
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7.2SC3507 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION ·With TO-3PFa package ·High-spe.