isc Silicon NPN Power Transistor 2SC3561 DESCRIP.
Inchange Semiconductor
2SC3561 - N-Channel MOSFET Transistor
isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimu.
