
2SC3561 - N-Channel MOSFET Transistor
isc Silicon NPN Power Transistor
2SC3561
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimu
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isc Silicon NPN Power Transistor 2SC3561 DESCRIP.
2SC3561 Distributor