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2SC3561 Datasheet - Inchange Semiconductor

2SC3561 N-Channel MOSFET Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter appli.

2SC3561-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC3561

Manufacturer:

Inchange Semiconductor

File Size:

195.40 KB

Description:

N-channel mosfet transistor.

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2SC3561 2SC3561 N-Channel MOSFET Transistor Inchange Semiconductor

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