2SC3561 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3561 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SC3561
Manufacturer: Inchange Semiconductor
File Size: 195.40 KB
Datasheet: 2SC3561-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Coll

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2SC3561 N-Channel MOSFET Transistor Inchange Semiconductor

Inchange Semiconductor 2SC3561-like datasheet