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2SC3565 Datasheet - Inchange Semiconductor

2SC3565 Power Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) *Good Linearity of hFE *Low Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in high frequency high voltage amplifier and TV viedo.

2SC3565_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC3565

Manufacturer:

Inchange Semiconductor

File Size:

191.00 KB

Description:

Power transistor.

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2SC3565 2SC3565 Power Transistor Inchange Semiconductor

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