2SC3565 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3565 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Low Saturation Voltage. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SC3565
Manufacturer: Inchange Semiconductor
File Size: 191.00 KB
Datasheet: 2SC3565_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Co

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2SC3565 Power Transistor Inchange Semiconductor

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