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2SC3514 - Silicon NPN Power Transistor

2SC3514 Description

isc Silicon NPN Power Transistor 2SC3514 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Good Linearity of hFE. Complement to Type 2SA1383. Minimum Lot-to-Lo.

2SC3514 Applications

* Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5

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Datasheet Details

Part number
2SC3514
Manufacturer
Inchange Semiconductor
File Size
198.61 KB
Datasheet
2SC3514_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC3514-like datasheet