2SC3514 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3514 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Good Linearity of hFE. Complement to Type 2SA1383. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SC3514
Manufacturer: Inchange Semiconductor
File Size: 198.61 KB
Datasheet: 2SC3514_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5

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2SC3514 Silicon NPN Power Transistor Inchange Semiconductor

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