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2SC3514 - Silicon NPN Power Transistor

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Part number 2SC3514
Manufacturer Inchange Semiconductor
File Size 198.61 KB
Description Silicon NPN Power Transistor
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Good Linearity of hFE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Pow

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