2SC3502 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 200 V. Complement to Type 2SA1380. Minimum Lot-to-Lot variations for ro.

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Datasheet Specifications

Part number: 2SC3502
Manufacturer: Inchange Semiconductor
File Size: 195.86 KB
Datasheet: 2SC3502-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A

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2SC3502 Silicon NPN Power Transistor Inchange Semiconductor

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