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2SC3512 - Silicon NPN RF Transistor

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Datasheet Details

Part number 2SC3512
Manufacturer Inchange Semiconductor
File Size 176.18 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC3512_InchangeSemiconductor.pdf

2SC3512 Product details

Description

Low Noise and High Gain NF = 1.6 dB TYP.@f = 900 MHz PG = 10.5 dB TYP.@f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-

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