2SC3515 Datasheet - Toshiba Semiconductor

2SC3515 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1384 Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Ma.

2SC3515_ToshibaSemiconductor.pdf