2SC3072 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm <.

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Datasheet Specifications

Part number: 2SC3072
Manufacturer: Toshiba ↗ Semiconductor
File Size: 170.42 KB
Datasheet: 2SC3072_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Medium Power Amplifier Applications 2SC3072 Unit: mm
* High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
* Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
* High power dissipation : PC =

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2SC3072 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC3072-like datasheet