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2SC3072 Datasheet - Toshiba Semiconductor

2SC3072, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm <.
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2SC3072_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3072

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

170.42 KB

Description:

Silicon NPN Transistor

Applications

* Medium Power Amplifier Applications 2SC3072 Unit: mm
* High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
* Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
* High power dissipation : PC =

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