2SC3072 Datasheet - Toshiba Semiconductor

2SC3072 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol R.

2SC3072_ToshibaSemiconductor.pdf