Datasheet4U Logo Datasheet4U.com

2SC3012 - NPN Transistor

2SC3012 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min). Good Linearity of hFE. Complement to Type 2SA1232. Minimum Lot-to-Lot var.

2SC3012 Applications

* For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-P

📥 Download Datasheet

Preview of 2SC3012 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3012
Manufacturer
INCHANGE
File Size
197.95 KB
Datasheet
2SC3012-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3011 - Silicon NPN epitaxial planer Transistor (Toshiba Semiconductor)
  • 2SC3017 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3018 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3019 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
  • 2SC3007 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3012-like datasheet