Datasheet4U Logo Datasheet4U.com

2SC3040 NPN Transistor

2SC3040 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot var.

2SC3040 Applications

* Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak

📥 Download Datasheet

Preview of 2SC3040 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC3040
Manufacturer
INCHANGE
File Size
221.39 KB
Datasheet
2SC3040-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3042 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3043 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3046 - Silicon NPN Transistor (Fujitsu)
  • 2SC3047 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
  • 2SC3007 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3040-like datasheet